? semiconductor components industries, llc, 2009 august, 2009 ? rev. 2 1 publication order number: mmbt4126lt1/d MMBT4126LT1G general purpose transistor pnp silicon features ? moisture sensitivity level: 1 ? esd rating: ? human body model: > 4000 v ? machine model: > 400 v ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ceo ? 25 vdc collector ? base voltage v cbo ? 25 vdc emitter ? base voltage v ebo ? 4 vdc collector current ? continuous i c ? 200 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1) @t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient (note 1) r ja 556 c/w total device dissipation alumina substrate, (note 2) @t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient (note 2) r ja 417 c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. device package shipping ? ordering information sot ? 23 case 318 style 6 marking diagram c3 m c3 = device code m = date code* = pb ? free package 1 2 3 collector 3 1 base 2 emitter http://onsemi.com MMBT4126LT1G sot ? 23 (pb ? free) 3000/tape & reel *date code orientation and/or overbar may vary depending upon manufacturing location. (note: microdot may be in either location) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d.
MMBT4126LT1G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 3) (i c = ? 1.0 madc, i b = 0) v (br)ceo ? 25 ? vdc collector ? base breakdown voltage (i c = ? 10 adc, i e = 0) v (br)cbo ? 25 ? vdc emitter ? base breakdown voltage (i e = ? 10 adc, i c = 0) v (br)ebo ? 4 ? vdc collector cutoff current (v ce = ? 30 vdc, v eb = ? 3.0 vdc) i cex ? ? 50 nadc on characteristics (note 3) dc current gain (i c = ? 2.0 madc, v ce = ? 1.0 vdc) (i c = ? 50 madc, v ce = ? 1.0 vdc) h fe 120 60 300 ? ? collector ? emitter saturation voltage (i c = ? 50 madc, i b = ? 5.0 madc) v ce(sat) ? ? 0.4 vdc base ? emitter saturation voltage (i c = ? 50 madc, i b = ? 5.0 madc) v be(sat) ? ? 0.95 vdc small ? signal characteristics current ? gain ? bandwidth product (i c = ? 10 madc, v ce = ? 20 vdc, f = 100 mhz) f t 250 ? mhz output capacitance (v cb = ? 5.0 vdc, i e = 0, f = 1.0 mhz) c obo ? 4.5 pf input capacitance (v eb = ? 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo ? 10 pf small ? signal current gain (i c = ? 2.0 madc, v ce = ? 10 vdc, f = 1.0 khz) (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) h fe 120 2.5 480 ? ? noise figure (i c = ? 100 adc, v ce = ? 5.0 vdc, r s = 1.0 k , f = 1.0 khz) nf ? 4.0 db 3. pulse test: pulse width 300 s, duty cycle 2.0%. typical transient characteristics figure 1. capacitance reverse bias (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 2. charge data i c , collector current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25 c t j = 125 c
MMBT4126LT1G http://onsemi.com 3 typical audio small ? signal characteristics noise figure variations (v ce = ? 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 3. f, frequency (khz) 2.0 3.0 4.0 5.0 1.0 0.1 figure 4. r g , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 2.0 k i c = 100 a source resistance = 2.0 k i c = 50 a h parameters (v ce = ? 10 vdc, f = 1.0 khz, t a = 25 c) figure 5. current gain i c , collector current (ma) 70 100 200 300 50 figure 6. output admittance i c , collector current (ma) h , dc current gain h , output admittance ( mhos) figure 7. input impedance i c , collector current (ma) figure 8. voltage feedback ratio i c , collector current (ma) 30 100 50 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 7 5 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe -4 70 30 0.7 7.0 0.7 7.0 7.0 3.0 0.7 0.3 0.7 7.0 0.7 7.0
MMBT4126LT1G http://onsemi.com 4 typical static characteristics figure 9. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c -55 c figure 10. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma figure 11. ?on? voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 12. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 -1.0 -1.5 -2.0 200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1.0 v +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat) , temperature coefficients (mv/ c) v
MMBT4126LT1G http://onsemi.com 5 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue an d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318 ? 01 thru ? 07 and ? 09 obsolete, new standard 318 ? 08. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 6: pin 1. base 2. emitter 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mmbt4126lt1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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